| Autor: |
Joohyung Lee, Hyungwoo Lee, Taekyeong Kim, Hye Jun Jin, Juyeon Shin, Youngki Shin, Sangho Park, Yoonho Khang, Seunghun Hong |
| Předmět: |
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| Zdroj: |
Nanotechnology; 3/2/2012, Vol. 23 Issue 8, p1-6, 6p |
| Abstrakt: |
We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source-drain voltage operation. At a high source-drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on-off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on-off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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