| Autor: |
Yuan, Ze, Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/2/2012, Vol. 100 Issue 14, p143503, 4p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Performance degradation due to interfacial traps is generally considered as one of the main challenges for III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this work, we have investigated the suppression of interface state response using band engineering in III-V quantum well MOSFETs and experimentally verified the concept in the antimonide materials system using a gate-stack consisting of Al2O3/GaSb/InAlSb. It is shown that if the thickness of the interfacial layer of GaSb is scaled down to a few monolayers, the effective bandgap of the interfacial layer increases dramatically due to quantum confinement, which leads to the suppression of interface-trap response. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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