| Autor: |
Hu, B., Chen, Y., Yang, A., Gillette, S., Fitchorov, T., Geiler, A., Daigle, A., Su, X. D., Wang, Z., Viehland, D., Harris, V. G |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Mar2012, Vol. 111 Issue 6, p064104, 5p |
| Abstrakt: |
Piezoelectric films of Pb(Zr0.53Ti0.47)O3 (PZT) were deposited by pulsed laser deposition onto metallic magnetostrictive substrates. In order to optimize the growth of PZT films, a buffer layer of Pt was employed, as well as variation of deposition temperature, pressure, and laser energy. Room temperature θ-2θ x-ray diffraction measurements indicate all diffraction features correspond to reflections indexed to a single PZT phase of space group P4mm. Scanning electron microscopy images reveal pinhole-free dense films of pyramidal shaped crystal arrangements whose orientation and size were controlled by variation of oxygen pressures during deposition. The resulting PZT films had a value of d33 ∼ 46 pm/V representing a 53% increase over previous efforts to realize a piezoelectric/Metglas™ film heterostructure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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