| Autor: |
Sheng-Rui, Xu, Zhi-Yu, Lin, Xiao-Yong, Xue, Zi-Yang, Liu, Jun-Cai, Ma, Teng, Jiang, Wei, Mao, Dang-Hui, Wang, Jin-Cheng, Zhang, Yue, Hao |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; Jan2012, Vol. 29 Issue 1, p1-3, 3p |
| Abstrakt: |
Nonpolar (11&bar20;) and semipolar (11&bar22;) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (11&bar22;) and nonpolar a-plane GaN template is 3×105 cm-1 and 8×105cm-1, respectively. The semipolar (11&bar22;) GaN shows an arrowhead-like structure, and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis. Both nonpolar (11&bar20;) and semipolar (11&bar22;) GaN have very strong BSF luminescence due to the optically active character of the BSFs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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