| Autor: |
Chang, Zeng, Shu-Ming, Zhang, Hui, Wang, Jian-Ping, Liu, Huai-Bing, Wang, Zeng-Cheng, Li, Mei-Xin, Feng, De-Gang, Zhao, Zong-Shun, Liu, De-Sheng, Jiang, Hui, Yang |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; Jan2012, Vol. 29 Issue 1, p1-4, 4p |
| Abstrakt: |
We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm) metal scheme, where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface. It is shown that unlike the conventional Ti/Al/Ti/Au contacts, the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10-4 Ω·cm2 even after annealing at 350°C. X-ray diffraction (XRD) measurements by synchrotron radiation and Auger electron spectroscopy (AES) examination are performed to understand the effects of heat treatment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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