Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces.

Autor: Akazawa, M., Gao, B., Hashizume, T., Hiroki, M., Yamahata, S., Shigekawa, N.
Zdroj: Physica Status Solidi (C); Mar2012, Vol. 9 Issue 3/4, p592-595, 4p
Databáze: Complementary Index
Externí odkaz: