Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template.

Autor: Li, Xingbin, Yu, Tongjun, Tao, Yuebin, Deng, Junjing, Xu, Chenglong, Zhang, Guoyi
Zdroj: Physica Status Solidi (C); Mar2012, Vol. 9 Issue 3/4, p445-448, 4p
Databáze: Complementary Index