| Autor: |
Cao, Qi, Tong, Cunzhu, Yoon, Soon Fatt, Liu, Chongyang, Ngo, Chun Yong |
| Zdroj: |
IEEE Transactions on Nanotechnology; Feb2012, Vol. 11 Issue 2, p231-235, 5p |
| Abstrakt: |
Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm^-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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