| Autor: |
Daly, B. C., Maris, H. J., Nurmikko, A. V., Kuball, M., Han, J. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 10/1/2002, Vol. 92 Issue 7, p3820, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We report on measurements of the thermal conductivity of epitaxially grown nitride thin films. These semiconductor materials are of considerable technological importance for applications such as blue-light emitters and high-power, high frequency electronic devices. Measurements were made in the temperature range of 150-400 K using an optical technique in which the sample is heated with an ultrashort (∼150 fs) light pulse, and a time-delayed probe light pulse is used to measure the temperature of the sample as a function of time. The conductivity of the polycrystalline sample and the alloys are found to be significantly reduced compared to published values for bulk GaN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
