| Autor: |
Wang, J. C., Chiao, S. H., Lee, C. L., Lei, T. F., Lin, Y. M., Wang, M. F., Chen, S. C., Yu, C. H., Liang, M. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/2002, Vol. 92 Issue 7, p3936, 5p, 1 Black and White Photograph, 1 Diagram, 6 Graphs |
| Abstrakt: |
This work studies and presents an inner-interface trapping physical model for the ultra-thin (effective oxide thickness= 15 Å) zirconium oxide (ZrO[sub 2]) film to explain its hysteresis phenomenon. The shift of the capacitance-voltage characteristics swept from accumulation to inversion and then swept back with light illumination is about 110 mV, which is larger than the shift without light illumination (∼45 mV). The mobile ion effect is obviated using bias-temperature stress measurement. The proposed model successfully explains not only the phenomenon but also the thickness effect for the capacitance-voltage characteristics and the different turn-around voltages of the current density-voltage characteristics of the zirconium dielectrics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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