Autor: |
Arora, Vijay K., Zainal Abidin, Mastura Shafinaz, Tan, Michael L. P., Riyadi, Munawar A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; Mar2012, Vol. 111 Issue 5, p054301, 6p, 1 Diagram, 4 Graphs |
Abstrakt: |
The temperature-dependent ballistic transport, using nonequilibrium Arora distribution function (NEADF), is shown to result in mobility degradation with reduction in channel length, in direct contrast to expectation of a collision-free transport. The ballistic mean free path (mfp) is much higher than the scattering-limited long-channel mfp, yet the mobility is amazingly lower. High-field effects, converting stochastic velocity vectors to streamlined ones, are found to be negligible when the applied voltage is less than the critical voltage appropriate for a ballistic mfp, especially at cryogenic temperatures. Excellent agreement with the experimental data on a metal-oxide-semiconductor field-effect transistor is obtained. The applications of NEADF are shown to cover a wide spectrum, covering regimes from the scattering-limited to ballistic, from nondegenerate to degenerate, from nanowire to bulk, from low- to high-temperature, and from a low electric field to an extremely high electric field. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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