Electrical Behavior of Group III and V Implanted Dopants in Silicon.
| Autor: | Baron, R., Shifrin, G. A., Marsh, O. J., Mayer, James W. |
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| Zdroj: | Journal of Applied Physics; Aug1969, Vol. 40 Issue 9, p3702-3719, 18p |
| Databáze: | Complementary Index |
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