Effect of a GaAsxP1-x Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs Substrates.
Autor: | Saul, Robert H. |
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Zdroj: | Journal of Applied Physics; Jul1969, Vol. 40 Issue 8, p3273-3279, 7p |
Databáze: | Complementary Index |
Externí odkaz: |