Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide.
| Autor: | Holloway, H., Bobb, L. C. |
|---|---|
| Zdroj: | Journal of Applied Physics; Jun1967, Vol. 38 Issue 7, p2893-2896, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Holloway, H., Bobb, L. C. |
|---|---|
| Zdroj: | Journal of Applied Physics; Jun1967, Vol. 38 Issue 7, p2893-2896, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|