X-ray topographic determination of the absence of lateral strains in ion-implanted silicon.
| Autor: | Tu, K. N., Chaudhari, P., Lal, K., Crowder, B. L., Tan, S. I. |
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| Zdroj: | Journal of Applied Physics; Oct1972, Vol. 43 Issue 10, p4262-4263, 2p |
| Databáze: | Complementary Index |
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