| Autor: |
Katerinchuk, V. N., Kovalyuk, Z. D., Netyaga, V. V., Betsa, T. V. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Sep2000, Vol. 26 Issue 9, p754, 3p |
| Abstrakt: |
Photoelectric properties of the n-SnSSe-p-InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS[sub 2-x]Se[sub x] alloy (x = 0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8-1.0 µm range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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