| Autor: |
Belyaev, A. A., Venger, E. F., Lyapin, V. G., Konakova, R. V., Milenin, V. V., Tkhorik, Yu. A., Hotovy, I., Kashin, G. N. |
| Předmět: |
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| Zdroj: |
Technical Physics; Jan98, Vol. 43 Issue 1, p56, 4p |
| Abstrakt: |
Peculiarities of contact formation in the system NbN-GaAs upon a change in the structural-phase state of the deposited metal are investigated. It is shown that the role of the chemical factor in the processes of contact formation decreases as the degree of structural perfection of the NbN alloy increases. The causes of the corresponding changes in the electronic structure of the interface as a result of the phase transition NbN-Nb[sub 4]N[sub 3] are discussed. The Auger spectrum and current-voltage and capacitance-voltage characteristics of NbN-GaAs surface-barrier structures are measured before and after annealing in vacuum at T = 850 °C for 10 s. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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