| Autor: |
Levin, M. N., Bormontov, E. N., Tatarintsev, A. V., Gitlin, V. R. |
| Předmět: |
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| Zdroj: |
Technical Physics; Aug99, Vol. 44 Issue 8, p923, 5p |
| Abstrakt: |
The spectrum of surface states at a semiconductor–insulator interface is studied through the relaxation of the gate voltage of an MIS transistor measured with a constant subthreshold current. The proposed method makes permits study of these states in both halves of the semiconductor gap and is convenient for testing integrated circuits. The possibilities of this method are illustrated using the example of radiation induced changes in the distribution of surface states. © 1999 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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