| Autor: |
Kotel’nikov, I. N., Kokin, V. A., Fedorov, Yu. V., Hook, A. V., Talbaev, D. T. |
| Předmět: |
|
| Zdroj: |
JETP Letters; 5/10/2000, Vol. 71 Issue 9, p387, 4p |
| Abstrakt: |
Tunneling spectra of the Al/δ-GaAs junctions fabricated by molecular-beam epitaxy in the regime of “intimate” contact of Al with GaAs (100) were studied at 1.6 K in a magnetic field B parallel to the two-dimensional electron-gas layer. The concentration of 2D electrons in the δ-layer grown at a distance of 20 nm from the Al/GaAs interface was 1.1×10[sup 12]cm[sup –2] and corresponded to a partial filling of only the lowest subband E[sub 0]. The tunneling spectra exhibited many-particle features, viz., a zero-bias anomaly, lines of longitudinal optical (LO) phonons, and characteristic “dips” corresponding to the energies E[sub i] of the 2D subbands. In the B fields below the critical value B[sub c ]≅11 T, the levels of 2D subbands underwent the usual diamagnetic shifts. At B≥B[sub c], the E[sub 1](B) term pinning and the anticrossing of the E[sub 1](B) and E[sub 0](B) + 2hω[sub LO] terms were observed, where hω[sub LO] is the LO-phonon energy in GaAs. The observed effects are interpreted as manifestations of resonance intersubband polarons arising in the δ-layer upon reaching the E[sub 1](B[sub c]) – E[sub 0](B[sub c]) = 2hω[sub LO] resonance. © 2000 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
