Optical and Electrical Properties of the InAs/GaAs Modulation-Doped Superlattices for InAs-Layer Thicknesses below and near the Quantum-Dot-Formation Threshold.

Autor: Mokerov, V. G., Fedorov, Yu. V., Guk, A. V., Pak, Kh. S., Khabarov, Yu. V., Danilochkin, A. V.
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Zdroj: Doklady Physics; Oct2000, Vol. 45 Issue 10, p523, 5p
Abstrakt: Studies the optical and electrical properties of the modulation-doped superlattices below and near the quantum-dot-formation threshold. Optical and electrical properties of the grown heterostructures; Photoluminescence spectra and electron mobility in a modulation-doped superlattice; Disposal of indium atoms.
Databáze: Complementary Index