| Autor: |
Glinchuk, K. D., Litovchenko, N. M., Prokhorovich, A. V., Stril’chuk, O. N. |
| Předmět: |
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| Zdroj: |
Semiconductors; Nov2000, Vol. 34 Issue 11, p1259, 5p |
| Abstrakt: |
Variations in the spectra of edge-emission photoluminescence of semi-insulating undoped GaAs crystals as a result of heat treatment for 20-90 min at 900°C were studied. It is shown that heat treatment substantially affects (transforms) the excitonic component of the spectrum. The observed changes in the spectra are related to variations in the impurity composition of the crystals studied. These variations are shown to be caused by heat treatment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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