| Autor: |
Evstropov, V. V., Dzhumaeva, M., Zhilyaev, Yu. V., Nazarov, N., Sitnikova, A. A., Fedorov, L. M. |
| Předmět: |
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| Zdroj: |
Semiconductors; Nov2000, Vol. 34 Issue 11, p1305, 6p |
| Abstrakt: |
An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I-V) characteristic (in lnI-V coordinates) is independent of the width of the space-charge region, i.e., on n- and p-region doping levels. This fact is unexplained by existing models. A dislocation shunt model based on multihop tunneling through a dislocation line, which may be considered as a chain of parabolic potential barriers, is proposed. The density of dislocations predicted by this model is in agreement with the transmission electron microscopy (TEM) observations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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