| Autor: |
Glinchuk, K. D., Litovchenko, N. M., Prokhorovich, A. V., Stril’chuk, O. N. |
| Předmět: |
|
| Zdroj: |
Semiconductors; May2000, Vol. 34 Issue 5, p514, 3p |
| Abstrakt: |
It is shown that an increase in carbon content in semi-insulating undoped GaAs crystals leads to a substantial rise of the concentration of gallium divacancies in these crystals. This effect seems to be related to the process of carbon atoms occupying the arsenic vacancies involved in the As-divacancy-Ga-divacancy complex. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
