| Autor: |
Zhukov, A. E., Kovsh, A. R., Mikhrin, S. S., Maleev, N. A., Odnoblyudov, V. A., Ustinov, V. M., Shernyakov, Yu. M., Kondrat’eva, E. Yu., Livshits, D. A., Tarasov, I. S., Ledentsov, N. N., Kop’ev, P. S., Alferov, Zh. I., Bimberg, D. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2000, Vol. 34 Issue 5, p609, 5p |
| Abstrakt: |
The power conversion efficiency of laser diodes with an array of quantum dots in the active region is analyzed. A model is proposed which allows analytical determination of the optimal cavity length corresponding to the highest conversion efficiency for a given output power. A comparison is made with experimental data for high-power lasers based on submonolayer quantum dots emitting at 0.94 µm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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