| Autor: |
Zubkova, S. M., Izyumov, V. A., Rusina, L. N., Smelyanskaya, E. V. |
| Předmět: |
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| Zdroj: |
Semiconductors; Mar2000, Vol. 34 Issue 3, p272, 5p |
| Abstrakt: |
The consistent application of the perturbation theory to the solution of the Schrödinger equation describing the shallow-donor state in multivalley semiconductors has allowed us to obtain a secular equation of an order equal to the number of valleys. The solution of this equation yields both the characteristics and the magnitudes of the splitting of the donor-center ground state. Intervalley interaction-matrix elements entering the secular determinant were constructed in the Bloch pseudofunction representation. The pseudowave functions were computed as the eigenvectors of a system of equations in the method of the empirical pseudopotential with a basis set of 65 plane waves. These matrix elements differ considerably from those constructed in a plane wave approximation. The impurity-center perturbing potential is approximated by a screened point Coulomb potential. The numerical calculations are illustrated by the examples of shallow isochoric donors of Group V in Ge and Si. Our results are in excellent agreement with experimental data for the lowest level A[sub 1] (1) and differ by 14-15% for the levels T[sub 1] (3) and E (2). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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