| Autor: |
Evstigneev, S. V., Imamov, R. M., Lomov, A. A., Sadof’ev, Yu. G., Khabarov, Yu. V., Chuev, M. A., Shipitsin, D. S. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jun2000, Vol. 34 Issue 6, p693, 7p |
| Abstrakt: |
The structures grown by molecular-beam epitaxy with In[sub x]Ga[sub 1-x]As quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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