| Autor: |
Davydov, V. Yu., Lundin, V. V., Smirnov, A. N., Sobolev, N. A., Usikov, A. S., Emel’yanov, A. M., Makoviıchuk, M. I., Parshin, E. O. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jan1999, Vol. 33 Issue 1, p1, 5p |
| Abstrakt: |
The influence of rapid-anneal conditions and subsequent coimplantation of oxygen ions on the photoluminescence of erbium ions implanted with an energy of 1 MeV and dose of 5 × 10[sup 14] cm[sup -2] in MOCVD-grown GaN films is investigated. The erbium photoluminescence intensity at a wavelength ∼1.54 µm increases as the fixed-time (15 s) anneal temperature is raised from 700 °C to 1300 °C. The erbium photoluminescence intensity can be increased by the coimplantation of oxygen ions at anneal temperatures in the indicated range below 900 °C. The transformation of the crystal structure of the samples as a result of erbium-ion implantation and subsequent anneals is investigated by Raman spectroscopy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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