| Autor: |
Pozˇela, J., Jucienė, V., Namajũnas, A., Pozˇela, K. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Jan1997, Vol. 31 Issue 1, p69, 3p |
| Abstrakt: |
We present calculations which show that independent quantization of electrons and phonons allows the intra- and intersubband electron-phonon scattering rate in two-dimensional structures to be changed. It is considered how the design of multi-heterostructure quantum well (QW) changes the electron mobility and population of subbands in the QW. It was shown that the insertion of the phonon wall (a few AlAs monolayers) into an AlAs/GaAs/AlAs double heterostructure allows the electron mobility in the QW to be enhanced and electron intersubband population to be inverted.© 1997 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
