| Autor: |
Deıbuk, V. G., Voznyı, A. V., Sletov, M. M. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jan2000, Vol. 34 Issue 1, p35, 5p |
| Abstrakt: |
The band structure of Al[sub x]Ga[sub 1-x]N substitutional solid solution is calculated by the method of local model pseudopotential in the modified virtual-crystal approximation. This provides an opportunity to explain both the dependence of the energy gap value (E[sub g]) on AlN concentration (x) and on temperature and the E[sub g](x) bending. The dynamics of chemical bonds in this compounds is studied by analyzing the spatial distribution of valence electron charge. The results of calculations are in a good agreement with the experimental data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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