| Autor: |
Gergel’, V. A., Mokerov, V. G., Timofeev, M. V. |
| Předmět: |
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| Zdroj: |
Semiconductors; Feb2000, Vol. 34 Issue 2, p228, 5p |
| Abstrakt: |
A closed theoretical model of the field effect in heterotransistor structures with modulation- and δ-doped regions is developed. In this model, the quantization of the energy spectrum of electrons in the channel and the Fermi-statistics-governed occupancy of the relevant energy subbands are consistently accounted for. An unconventional approximate method for summation of partial electron densities in lower spatial-quantization subbands is used to obtain the resultant dependences of the surface density of electrons on chemical potential and on the voltage applied to the transistor gate; these dependences hold in the entire range of possible concentrations of charge carriers in the channel, from low (subthreshold) to ultrahigh (ultraquantum) concentrations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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