Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N or P substrates.
| Autor: | Geddo, M., Maghini, D., Stella, A. |
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| Zdroj: | Il Nuovo Cimento della Societa Italiana di Fisica: D; 1989, Vol. 11 Issue 12, p1773-1784, 12p |
| Databáze: | Complementary Index |
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