| Autor: |
Zhao, Youngsheng, Liu, Ying, Jiang, Xiuying, Wang, Zhiling, Liu, Bao, Xing, Jin, Sun, Zhongzhe, Zhang, Xiaobo, Du, Guotong |
| Zdroj: |
Optical & Quantum Electronics; Nov1996, Vol. 28 Issue 11, p1685-1690, 6p |
| Abstrakt: |
We report on two kinds of AlGaAs terraced substrate inner stripe superluminescent diodes: those with SiO antireflection coatings, and those with unpumped absorbing regions. The devices were fabricated by one-step liquid phase epitaxy. Both kinds of devices suppress stimulating oscillation effectively. The characteristics of the diodes with antireflection coatings are better than those with unpumped absorbing regions. The spectral width of the diodes with antireflection coatings is over 23 nm, the output power is about 7 mW, the modulation depth is less than 5%, and the horizontal divergence angle is smaller than 10-15°. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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