| Autor: |
Tolmachev, V.A., Granitsyna, L.S., Vlasova, E.N., Volchek, B.Z., Nashchekin, A.V., Remenyuk, A.D., Astrova, E.V. |
| Předmět: |
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| Zdroj: |
Semiconductors; Aug2002, Vol. 36 Issue 8, p932, 4p |
| Abstrakt: |
The potentialities of vertical anisotropic etching of (110) silicon for the fabrication of one-dimensional photonic crystal with a high refractive index contrast have been studied. It is shown that advances toward the near-IR spectral range are limited by the mechanical strength of thin silicon walls. The device structures obtained consist of 50 trenches, 114 µm deep, with 1.8-µm-thick Si walls (structure period 8 µm). Their reflectance spectra in the wavelength range 2.5-16.5 µm show good agreement with calculation results, although the main photonic band gap at λ ≈ 28 ± 10 µm remained outside the spectral region of measurements. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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