| Autor: |
Yanovskii, V., Maksimova, N., Arbuzova, G., Morozov, V., Misik, A., Verozubova, G. |
| Zdroj: |
Soviet Physics Journal; 1987, Vol. 30 Issue 9, p730-734, 5p |
| Abstrakt: |
Morphology and elemental and phase composition of Pb-GaAs contacts prepared by electroprecipitation of the metal and annealed in a hydrogen atmosphere are studied. It is shown that the interaction of the lead with the gallium arsenide occurs with participation of a liquid phase which appears at 100-300°C due to dissociation of the semiconductor and gallium diffusion into the metallic coating. The absence of complex ions of the PbGa(As) type in the secondary ion mass spectra of the contacts analyzed indicates that chemical interaction of the lead with gallium and arsenic does not occur. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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