Effect of photoheating of electrons on the properties of compensated semiconductors.
| Autor: | Mironov, A. |
|---|---|
| Zdroj: | Soviet Physics Journal; 1984, Vol. 27 Issue 2, p92-95, 4p |
| Abstrakt: | It is shown that even a small contribution to the total density of the high-energy tail in the electron distribution during impurity photoexcitation can change noticeably such properties of a compensated semiconductor as its Hall mobility and, in particular, the capture coefficient at repulsing Coulomb centers. [ABSTRACT FROM AUTHOR] |
| Databáze: | Complementary Index |
| Externí odkaz: |
|