| Abstrakt: |
Conduction processes in supermultilayer films created on the basis of nonstoichiometric layers of silicon and germanium oxide, constituting high-resistance semiconductors, are investigated. The laws governing the variation in conductivity with thickness, temperature, and electric field are established. The results obtained are interpreted within the framework of the barrier model of conduction. Good agreement of the theoretical and experimental characteristics is observed. [ABSTRACT FROM AUTHOR] |
