Autor: |
Karikh, E., Kurnosov, V., Manak, I., Sapozhnikov, S., Shilov, A. |
Zdroj: |
Soviet Physics Journal; 1980, Vol. 23 Issue 11, p933-936, 4p |
Abstrakt: |
An investigation was made of the current dependences of the carrier lifetime τ and of the emission spectrum of stripe double-sided heterostructure lasers based on GaAlAs operated under conditions corresponding to the transition from spontaneous emission to lasing in the range of currents up to ∼2I. The dependence of τ on the ratio I/I was found to be stronger than for homojunction lasers. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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