| Autor: |
Ezhovskii, Yu., Sanitarov, V., Kalinkin, I. |
| Zdroj: |
Soviet Physics Journal; 1977, Vol. 20 Issue 3, p320-324, 5p |
| Abstrakt: |
The electrophysical properties of epitaxial films of cadmium selenide doped with zinc or gallium are investigated. It is shown that in doped films intercrystalline barriers are absent, and the mechanism of electron scattering is close to the scattering mechanism in single crystals. It is suggested that the removal of the intercrystalline energy barrier is due to localization of part of the activator at intercrystallite boundaries and neutralization of acceptor states in neutral complexes. The difference between the doping effect of zinc and gallium is shown. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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