Band structure and scattering mechanisms in manganese monosilicide.

Autor: Ostrovskii, F., Dmitriev, E., Krentsis, R., Gel'd, P.
Zdroj: Soviet Physics Journal; 1969, Vol. 12 Issue 12, p1598-1601, 4p
Abstrakt: The electrical and thermal conductivities, the thermal emf, and the Hall coefficient have been measured in manganese monosilicide at temperatures between 70 and 700 °K. Band parameters are calculated for MnSi on the basis of wide-band and narrow-band models. Scattering mechanisms for the current carriers and phonons are discussed; in particular, the anomalous temperature dependence of the thermal conductivity is attributed to the high efficiency for phonon scattering by conduction electrons. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index