The Frenkel effect in semiconductor diodes.
| Autor: | Gaman, V. |
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| Zdroj: | Soviet Physics Journal; 1967, Vol. 10 Issue 9, p53-56, 4p |
| Abstrakt: | A possible explanation is postulated of the experimentally observed (under certain conditions) dependence of the reverse current of geranium and silicon diodes on the applied voltage. The explanation is based on a supposition that the probability of the generation of electrons and holes by recombination centers in the zone of the volume charge of a p-n junction (to which an inverse voltage is applied) is increased due to the thermal ionization being facilitated by the electric field. [ABSTRACT FROM AUTHOR] |
| Databáze: | Complementary Index |
| Externí odkaz: |
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