| Autor: |
Drakopoulos, Michael, Zegenhagen, Jörg, Snigirev, Anatoly, Snigireva, Irina, Hauser, Maik, Eberl, Karl, Aristov, Vitalii, Shabelnikov, Leonid, Yunkin, Vecheslav |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/16/2002, Vol. 81 Issue 12, p2279, 3p, 2 Diagrams, 2 Graphs |
| Abstrakt: |
We introduce a microprobe technique based on the x-ray standing wave method (XSW) demonstrating that structural analysis can be achieved with chemical sensitivity on a microscopic scale. We apply this XSW microscopy technique to study an epitaxially grown GaAs/Al[sub 0.1] Ga[sub 0.9]As/GaAs(001) heterostructure in cross section. We focus the x-ray beam by a refractive lens onto the cleaved sample and analyze the constituent elements within the 4 µm thick Al[sub 0.1]Ga[sub 0.9]As layer resolving the substitutional location of Al. The new micro-XSW technique will permit microscopic examinations of the structure of integrated semiconductor devices or microscopic crystalline grains with chemical sensitivity and structural resolution on the pm scale. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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