| Autor: |
Boriskov, P. P., Velichko, A. A., Pergament, A. L., Stefanovich, G. B., Stefanovich, D. G. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; May2002, Vol. 28 Issue 5, p406, 3p |
| Abstrakt: |
The effect of a strong electric field on the metal-insulator phase transition in vanadium dioxide was studied. It was found that the field application to a silicon-silicon oxide-silicon nitride-vanadium dioxide (Si-SiO[sub 2]-Si[sub 3]N[sub 4]-VO[sub 2]) heterostructure shifts the critical temperature of this transition toward lower values under conditions when the thermal effects are minimized. Numerical modeling of the current-voltage characteristics of the vanadium dioxide-based sandwich-type switches measured at various temperatures in the range from 15 to 350 K showed that the applied electric field influences the critical concentration and temperature of the phase transition. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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