| Autor: |
Katerinchuk, V. N., Kovalyuk, Z. D., Betsa, T. V., Kaminskiı, V. M., Netyaga, V. V. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; May2001, Vol. 27 Issue 5, p424, 3p |
| Abstrakt: |
The photoelectric properties of the oxide-p-InSe heterojunction formed on the InSe crystal plane parallel to the crystallographic C axis were studied. The samples were prepared by thermal oxidation of a single crystal InSe substrate. The spectra of photosensitivity revealed no influence of the surface recombination effects on the heterojunction properties. The capacitance-voltage characteristics showed that the p-n junction is sharp and the corresponding energy barrier is 0.17 eV. The charge transfer through the barrier is described within the framework of the diode theory, with a diode coefficient of the current-voltage characteristic being close to unity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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