Alternating-Strain-Induced Drift of Nonequilibrium Charge Carriers in GaAs Photodetectors.

Autor:	Zaveryukhin, B. N., Zaveryukhina, N. N., Muminov, R. A., Tursunkulov, O. M.
Předmět:	ELECTRIC fields PIEZOELECTRIC semiconductors MAGNETIC traps
Zdroj:	Technical Physics Letters; Mar2002, Vol. 28 Issue 3, p207, 4p
Abstrakt:	The drift of nonequilibrium charge carriers in GaAs was studied. It is demonstrated that the electric and acoustic (ultrasonic) fields significantly influence the transport of charge carriers in photodetectors based on piezoelectric semiconductors with traps. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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