| Autor: |
Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skiı, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P. |
| Předmět: |
|
| Zdroj: |
Technical Physics Letters; Aug2002, Vol. 28 Issue 8, p696, 3p |
| Abstrakt: |
The parameters of high-power laser diodes operating at λ = 0.94 µm, based on MBE-grown In[sup 0.1]Ga[sub 0.9]As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are characterized by a low threshold current density, a high optical output power, a high differential quantum efficiency, and a long working life (above 10 000 h). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
