Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure Based on These Films.

Autor:	Georgobiani, A. N., Gruzintsev, A. N., Vorob’ev, M. O., Kaiser, U., Richter, W., Khodos, I. I.
Předmět:	GALLIUM nitride METALLIC films ELECTROLUMINESCENCE
Zdroj:	Semiconductors; Jun2001, Vol. 35 Issue 6, p695, 5p
Abstrakt:	Studies of the effect of annealing in a nitrogen plasma of GaN films doped with Mg on their photoluminescence and photoconductivity spectra and on the type of conductivity were carried out. A number of narrow emission bands that peaked at 3.06, 3.17, and 3.27 eV in the ultraviolet (UV) spectral region in GaN:Mg are observed after low-temperature annealing in a nitrogen plasma. The ZnO-GaN:Mg heterostructures are obtained with electroluminescence peaks in the UV excitonic region of GaN at an energy of 3.44 eV and in the edge region of GaN at an energy of 3.26 eV. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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