| Autor: |
Georgobiani, A. N., Gruzintsev, A. N., Aminov, U. A., Vorob’ev, M. O., Khodos, I. I. |
| Předmět: |
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| Zdroj: |
Semiconductors; Feb2001, Vol. 35 Issue 2, p144, 5p |
| Abstrakt: |
The effect of annealing in nitrogen plasma on the photoluminescence and photoconductivity spectra, conduction type, and the surface morphology of gallium nitride films doped with zinc was studied. Emergence of intense ultraviolet edge emission peaking at a wavelength of 376 nm was observed after a high-temperature annealing in nitrogen plasma was detected. An appreciable suppression of blue donor-acceptor and excitonic photoluminescence in annealed GaN:Zn samples was observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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