| Autor: |
Solov’ev, V. A., Sedova, I. V., Toropov, A. A., Terent’ev, Ya. V., Sorokin, S. V., Mel’tser, B. Ya., Ivanov, S. V., Kop’ev, P. S. |
| Předmět: |
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| Zdroj: |
Semiconductors; Apr2001, Vol. 35 Issue 4, p419, 5p |
| Abstrakt: |
The fabrication of new hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures by molecular beam epitaxy and investigation of their structural, luminescent, and transport properties are reported for the first time. These structures show intense luminescence both in the infrared and in the visible regions of the spectrum. This factor, taken together with structural data, indicates a heterointerface of high quality between the III-V and II-VI layers. A theoretical estimate is made of the relative positions of energy bands in the proposed hybrid structures, indicating that the InAs/CdSe interface is a type-II heterojunction, whereas the InAs/Cd[sub 0.85]Mg[sub 0.15]Se interface is a type-I heterojunction with a large valence band offset ΔE[sub v] ≈ 1.6 eV. The data obtained on the longitudinal electron transport at the InAs/Cd(Mg)Se heterointerface are in good agreement with the theoretical estimate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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