| Autor: |
Baıdakova, M. V., Vul’, A. Ya., Golubev, V. G., Grudinkin, S. A., Melekhin, V. G., Feoktistov, N. A., Krüger, A. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Jun2002, Vol. 36 Issue 6, p615, 6p |
| Abstrakt: |
The effect of hot-filament chemical vapor deposition conditions on the phase composition of diamond films grown on a silicon substrate was studied. The growth conditions providing the highest content of diamond phase at a growth rate of about 1 µm/h were ascertained. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
