| Autor: |
Mitrokhin, V. I., Rembeza, S. I., Sviridov, V. V., Yaroslavtsev, N. P. |
| Předmět: |
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| Zdroj: |
Semiconductors; Feb2002, Vol. 36 Issue 2, p130, 6p |
| Abstrakt: |
The effect of optical radiation on internal friction in piezoelectric semiconductors was studied; this effect is related to electronic-mechanical relaxation at deep-level centers. It is ascertained that the behavior of internal friction depends heavily on the intensity and wavelength of radiation and on the sample temperature. An anomalous peak is observed in the spectral dependence of internal friction; this peak is located in the fundamental-absorption region and is associated with a shift of the optical-absorption zone to the irradiated surface. The effect of the internal-friction slow relaxation after the illumination was switched off was observed. A model relating the slow relaxation to thermal depletion of attachment levels is suggested. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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